JPS62173692A - 半導体集積回路 - Google Patents

半導体集積回路

Info

Publication number
JPS62173692A
JPS62173692A JP61016051A JP1605186A JPS62173692A JP S62173692 A JPS62173692 A JP S62173692A JP 61016051 A JP61016051 A JP 61016051A JP 1605186 A JP1605186 A JP 1605186A JP S62173692 A JPS62173692 A JP S62173692A
Authority
JP
Japan
Prior art keywords
output
circuit
nand gate
becomes
delay
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61016051A
Other languages
English (en)
Japanese (ja)
Other versions
JPH038037B2 (en]
Inventor
Atsushi Takeuchi
淳 竹内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP61016051A priority Critical patent/JPS62173692A/ja
Priority to US07/003,898 priority patent/US4717835A/en
Priority to KR1019870000311A priority patent/KR910008941B1/ko
Priority to DE8787300412T priority patent/DE3765259D1/de
Priority to EP87300412A priority patent/EP0232038B1/en
Publication of JPS62173692A publication Critical patent/JPS62173692A/ja
Publication of JPH038037B2 publication Critical patent/JPH038037B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01—Shaping pulses
    • H03K5/04—Shaping pulses by increasing duration; by decreasing duration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/13—Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/153—Arrangements in which a pulse is delivered at the instant when a predetermined characteristic of an input signal is present or at a fixed time interval after this instant
    • H03K5/1534—Transition or edge detectors

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
JP61016051A 1986-01-28 1986-01-28 半導体集積回路 Granted JPS62173692A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP61016051A JPS62173692A (ja) 1986-01-28 1986-01-28 半導体集積回路
US07/003,898 US4717835A (en) 1986-01-28 1987-01-16 Semiconductor integrated circuit with detection circuit for address signal change
KR1019870000311A KR910008941B1 (ko) 1986-01-28 1987-01-16 입력신호 변화를 검출하는 회로를 지닌 반도체 집적회로
DE8787300412T DE3765259D1 (de) 1986-01-28 1987-01-19 Integrierte halbleiterschaltung mit erkennungsschaltung fuer adressensignal-wechsel.
EP87300412A EP0232038B1 (en) 1986-01-28 1987-01-19 Semiconductor integrated circuit with detection circuit for address signal change

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61016051A JPS62173692A (ja) 1986-01-28 1986-01-28 半導体集積回路

Publications (2)

Publication Number Publication Date
JPS62173692A true JPS62173692A (ja) 1987-07-30
JPH038037B2 JPH038037B2 (en]) 1991-02-05

Family

ID=11905778

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61016051A Granted JPS62173692A (ja) 1986-01-28 1986-01-28 半導体集積回路

Country Status (5)

Country Link
US (1) US4717835A (en])
EP (1) EP0232038B1 (en])
JP (1) JPS62173692A (en])
KR (1) KR910008941B1 (en])
DE (1) DE3765259D1 (en])

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5019724A (en) * 1989-12-20 1991-05-28 Sgs-Thomson Microelectronics, Inc. Noise tolerant input buffer
US4973865A (en) * 1989-12-20 1990-11-27 Vlsi Technology, Inc. Auto-delay gain circuit
DE69030575T2 (de) * 1990-06-29 1997-11-13 Philips Electronics Nv Integrierte Halbleiterschaltung mit einem Detektor
JP2781651B2 (ja) * 1990-10-15 1998-07-30 日本電気アイシーマイコンシステム株式会社 Ｉｃメモリ回路
US5124584A (en) * 1990-10-22 1992-06-23 Sgs-Thomson Microelectronics, Inc. Address buffer circuit with transition-based latching
KR940005785B1 (ko) * 1991-12-31 1994-06-23 현대전자산업 주식회사 어드레스 전이 검출회로
US5264745A (en) * 1992-08-28 1993-11-23 Advanced Micro Devices, Inc. Recovering phase and data from distorted duty cycles caused by ECL-to-CMOS translator
US5289060A (en) * 1992-09-16 1994-02-22 Texas Instruments Incorporated Programmable glitch filter
US5294848A (en) * 1992-10-26 1994-03-15 Eastman Kodak Company Wide variation timed delayed digital signal producing circuit
US5418479A (en) * 1993-12-27 1995-05-23 Intel Corporation Method and circuitry for generating a safe address transition pulse in a memory device
EP0762649A3 (en) * 1995-09-05 1998-04-01 Texas Instruments Incorporated A pulse detection circuit
JP3087653B2 (ja) * 1996-05-24 2000-09-11 日本電気株式会社 半導体記憶装置
KR19980082928A (ko) * 1997-05-09 1998-12-05 윤종용 모드 선택을 위한 펄스 발생 회로를 갖는 반도체 장치
KR100286099B1 (ko) * 1998-05-29 2001-04-16 윤종용 클럭모니터회로및이를이용한동기식반도체메모리장치

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4286174A (en) * 1979-10-01 1981-08-25 Rca Corporation Transition detector circuit
US4524291A (en) * 1983-01-06 1985-06-18 Motorola, Inc. Transition detector circuit
US4614883A (en) * 1983-12-01 1986-09-30 Motorola, Inc. Address transition pulse circuit
JPS60139015A (ja) * 1983-12-27 1985-07-23 Fujitsu Ltd パルス発生回路
US4633102A (en) * 1984-07-09 1986-12-30 Texas Instruments Incorporated High speed address transition detector circuit for dynamic read/write memory

Also Published As

Publication number Publication date
KR910008941B1 (ko) 1991-10-26
US4717835A (en) 1988-01-05
EP0232038A2 (en) 1987-08-12
EP0232038A3 (en) 1988-08-10
JPH038037B2 (en]) 1991-02-05
KR870007512A (ko) 1987-08-19
DE3765259D1 (de) 1990-11-08
EP0232038B1 (en) 1990-10-03

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term